CBRAM is a form of Resistive RAM (ReRAM) based on the migration of copper and redox reactions to make and break filamentary within a cross-point insulation gap. The results of new research will be presented at the 48th European Solid-State Device Research Conference, being held in Germany on September 4th, 2018.
Although numerous ReRAM material systems are being investigated copper-based CBRAM has been in the market in stand-alone form for many years. It requires as few as a single additional mask to be added to a logic process. Adesto said that the research paper will describe recent innovations that increase the reliability of CBRAM.
The CBRAM paper will be presented on Tuesday September 4 at 15:00 local time.
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