Automotive MOSFETs offer high efficiency through very low RDS(on)

June 12, 2018 // By Christoph Hammerschmidt
NPXs power devices spin-off Nexperia has introduced a series of MOSFETs with particular low RDS(on). Due to this low resistance, the devices enable designers to reduce significant space savings.

The AEC-Q101-qualified, 40 V automotive superjunction MOSFETs in the rugged, electrically- and thermally-efficient LFPAK56E casing deliver a footprint reduction of up to 81% when compared to traditional solutions such as bare die modules, D 2PAK or D 2PAK-7 devices. The 0.9 mΩ, 220 A DC-rated BUK9J0R9-40H MOSFET suits applications up to 1.2 kW, and is also lower cost than larger D 2PAK devices which were the previous best solution.

As well as reducing R DS(on) the new devices also feature an improved DC current rating of 220 A – a first for the automotive Power-SO8 footprint. This enables higher power density on a small footprint, which is especially valuable for safety-critical automotive applications that require dual redundant circuitry. The use of Superjunction technology delivers a higher Avalanche capability and Safe Operating Area for improved performance under fault conditions.

LFPAK56 Trench 9 MOSFETs facilitate paralleling for high current applications. The products suit automotive functions such as motor control (brushed and brushless) for power steering, transmission control, ABS, ESC, pumps (water, oil and fuel), fan speed control, reverse battery protection and DC/DC converters.

More information: https://www.nexperia.com/


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