Intel, Micron call time on 3D-NAND collaboration

January 08, 2018 // By Peter Clarke
Intel Corp. and Micron Technology Inc. have announced that after the completion of their current generation of 3D-NAND flash memory technology the two companies will develop 3D-NAND flash memory independently.

However, the parting of the ways does not apply to the phase-change based 3D-XPoint memory. The two companies said they will continue to cooperate on 3D-XPoint memory at the Intel-Micron Flash Technologies (IMFT) joint venture fab in Lehi, Utah, which they also disclosed is now entirely focused on the production of 3D-XPoint memory.

The Intel-Micron third generation of 3D-NAND flash memory is due to be delivered towards the end of 2018 or early in 2019. Beyond that node the two companies will work independently "to better optimize the technology and products for their individual business needs," the companies said in a statement.

The two companies are currently ramping products based on their second-generation of 3D NAND technology based on 64 layers.

"Micron's partnership with Intel has been a long-standing collaboration, and we look forward to continuing to work with Intel on other projects as we each forge our own paths in future NAND development," said Scott DeBoer, executive vice president of Technology Development at Micron. "Our roadmap for 3D NAND technology development is strong, and we intend to bring highly competitive products to market based on our industry-leading 3D NAND technology."

Related links and articles:

www.intel.com

www.micron.com

News articles:

SK Hynix takes 3D-NAND to 72 layers

Samsung starts production at world's biggest fab

Toshiba takes 3D-NAND to 96-layers, 4 bits per cell

Yangtze makes 32-layer NAND flash


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