Peregrine, GloFo develop RF SOI process for 300mm wafers

February 03, 2017 //By Peter Clarke
Peregrine Semiconductor Corp. (San Diego, Calif.) has announced its UltraCMOS12 silicon-on-insulator manufacturing process and claims its achieves improved performance over previous processes.

Peregrine Semiconductor Corp. (San Diego, Calif.) has announced its UltraCMOS12 silicon-on-insulator manufacturing process and claims its achieves improved performance over previous processes.

The process has an RonCoff figure of 80fs a 25 percent improvement over the previous generation and the lowest in the industry, Peregrine claims.

RonCoff is a ratio of how much loss occurs when a radio signal goes through a switch in its on state and how much the radio signal leaks through the capacitor in its off state.

To develop the UltraCMOS12 process Peregrine worked with full service foundry Globalfoundries Inc. as it did for UltraCMOS10 and UltraCMOS11 UltraCMOS 11 technology, introduced in July 2015, was the industry's first RF SOI platform for 300mm diameter wafers.

"This new RF SOI technology reaffirms our commitment to the RF market and is another example of how Globalfoundries can provide industry-leading levels of performance, reliability and scalabilities," said Raj Nair, vice president of technology development at Globalfoundries, in a statement issued by Peregrine.

A Murata company since December 2014, Peregrine claims to hold more than 300 issued and pending patents and have shipped over 3.5 billion UltraCMOS units.

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