Is Weebit's SiOx memory headed towards ST, or Samsung?

December 31, 2018 // By Peter Clarke
Nonvolatile memory developer Weebit Nano Ltd. (Hod Hasharon, Israel) has said it is moving its ReRAM memory technology to a 28nm fully-depleted silicon-on-insulator (FDSOI) manufacturing process on 300mm-diameter wafers in preparation for commercialization.

The company has also said it expects the commercialization will be completed in 4Q19 and that it is now looking to transfer manufacturing to a production wafer fab.

STMicroelectronics NV and Samsung Electronics Co. Ltd. are the two chip companies that run a 28nm FDSOI manufacturing process commercially. Rumors did surface in 2014 that Chinese foundry SMIC was ready to make 28nm FDSOI for STMicroelectronics but little has been heard about that possibility since. Globalfoundries is also a proponent of FDSOI but offers the technology on a 22nm manufacturing process. If a commercial wafer fab does agree to make Weebit's silicon-oxide memory it could be as a foundry-only arrangement or with some degree of licensing and option to use the technology on their own account.

The migration is being done by an extension of Weebit's partnership with the research institute Leti (Grenoble, France). Development up to now has been done on 200mm-diameter wafers using 40nm technology as the vehicle.

Weebit and Leti had previously said they were looking at developing both 28nm bulk CMOS and 28nm FDSOI platforms for the technology but the move to 300mm-diameter wafers, the largest size used in wafer fabs is key to commercialization, they said.

"Weebit is extremely pleased with its collaboration with Leti, and excited to start the move to production-fab processes. As far as we know, no non-volatile technology other than ReRAM works on geometries smaller than 20nm, so our ReRAM memories are very attractive for companies using leading-edge designs, including leading artificial intelligence applications," said Coby Hanoch, CEO of Weebit Nano, in a statement.

Related links and articles:

www.weebit-nano.com

www.leti.fr

News articles:

Weebit silicon-oxide ReRAM headed to 28nm, AI

ARM backs embedded MRAM on Samsung's FDSOI process

ST samples MCU with embedded phase-change memory

University College London spins out ReRAM startup


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