BeSang launches non-volatile DRAM

BeSang launches non-volatile DRAM

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BeSang Inc. (Hillsboro, Oregon) a developer and licensor of 3D IC technologies, has introduced non-volatile 3D DRAM as licensible intellectual poperty.
By Peter Clarke

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The method of implementation is to put a NOR flash cell array alongside a DRAM array with bit-to-bit mirroring.

Such non-volatile chips with a dynamic access page have been developed before but in conventional 2D manufacturing rather than 3D manufacturing

Unlike conventional volatile DRAM, non-Volatile 3D DRAM does not lose data on power down and returns to its original state within 100ns read latency once power is provided. It therefore, it serves as a rapid main memory, as the 100ns read latency of integrated NOR is more than 1,000 times faster than a traditional solid-state drive.

Non-Volatile 3D DRAM enables instant booting of computers and access to their paused work immediately. Non-Volatile 3D DRAM does not change speed, performance, nor power consumption during normal operation, BeSang claimed.

“We don’t need to sleep or suspend our computers if they are equipped with Non-Volatile 3D DRAM,” states Sang-Yun Lee, CEO of BeSang, in a statement. “If operating system is stored in the integrated NOR cells, no booting up from storage devices is required. Non-Volatile 3D DRAM will change the fundamentals of our working behavior in many personal and industrial computer applications with enhanced speed, fortified stability, and convenience.”

BeSang did not indicate what manufacturing processes or existing memory compilers the technology is compatible with or what size of memories are possible. “Non-volatile 3D DRAM” is available through IP licensing from BeSang.

Related links and articles:

www.besang.com

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