GloFo, Singapore form $120 million ReRAM project

GloFo, Singapore form $120 million ReRAM project

Technology News |
Nanyang Technological University, Singapore and Globalfoundries Inc. have formed a partnership to develop a novel resistive RAM (ReRAM) and demonstrate manufacture on 300mm-diameter wafers.
By Peter Clarke

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The $120 million partnership, supported by the parties’ in-cash and in-kind contributions, will seek to demonstrate the new technology on 12″ wafers and is reportedly has a four-year term dating from some time in 2018. The money will fund 16 researchers working on ReRAM circuit design for next-generation smart devices and chip packaging for advanced IoT applications. The project is an interdisciplinary initiative involving the School of Electrical and Electronics Engineering and the School of Materials Science and Engineering.

“The partnership between NTU and GF Singapore aims to explore next-generation non-volatile memory devices, designed and made in Singapore. This work will contribute to innovation in microelectronics, a key pillar supporting Singapore’s economy,” said Professor Subra Suresh, president of NTU.

Nothing was said about the particular form of ReRAM but it was said that various ReRAM prototypes will be developed and tested on the NTU Smart Campus.

The project builds on an earlier collaboration between the two organisations on magnetic memory. Both NTU and Globalfoundries Singapore are founding members of the Singapore Spintronics Consortium (SG-SPIN).

Related links and articles:

www.globalfoundries.com

www.ntu.edu.sg

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