Irresistible Materials ramps production of EUV photoresist
The company disclosed its extreme ultraviolet (EUV) lithography capable resist material at the SPIE conference in 2017 and since then has contined to improve the resolution, sensitivity and line-edge roughness. Recent tests on ASML EUV lithography machines conducted by IMEC have validated the progress.
Irresistible Materials is supplying Intel, Samsung and Globalfoundries and has had dealings with TSMC and has achieved feature resolutions of 18nm, equivalent to a 7nm node, and 16nm, equivalent to a 5nm node. A 14nm feature resolution would be equivalent to a 3.5nm node and is expected to be needed in 2021.
Multi trigger resist is now consistently achieving 16nm lines with good LER and sensitivity, and is heading towards 14nm and beyond, IM claimed.
“Due to intense customer interest in 2017, IM has shifted its focus to pilot-scale production to provide samples for pre-production testing,” said David Ure, founder and executive director of Irresistible Materials, in a statement. “We have met a series of key technical milestones required for commercial prototyping, including third party performance testing and validation on an NXE tool, and our next move will be to work with our manufacturing partners to expand production facility footprint through 2018 and 2019 in preparation for large-scale pilot production needs in 2019/2020.”
The multi-trigger resist is due to feature in four presentations at SPIE 2018.
IM was founded in 2010 and its technology was originally developed at the University of Birmingham, UK. Since launch, IM has developed an extensive patent portfolio covering innovative resist (EUV and E-beam) and spin-on-carbon hard-mask materials.
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