CEA-Leti said the extension was possible because the Auvergne Rhone Alpes region financed the acquisition of a 193nm immersion lithography tool, a cornerstone of the investment plan for 2017-2018. CEA-Leti said it also benefitted from financial support from the French government for the second phase of the plan 2018-2019. The value of the funding was not disclosed.
CAE-Leti is looking to add modules for the production of numerous non-volatile memories, image sensors, photonics ICs, high performance computing and edge-AI technologies and wafer-to-wafer bonding.
The non-volatile memory targets include: phase-change memory (PCRAM) oxide-based resistive memory (OxRAM) and conductive bridging RAM (CBRAM). CEA-Leti’s advanced CMOS strategy targets fully-depleted silicon-on-insulator (FDSOI) for edge-AI, analog and RF applications.
“Our 300mm line will help Leti continue this strategy by accessing dimensions that make it possible to address the pressing challenges associated with emerging technologies, such as quantum, nanowires and sequential 3D integration,” said Emmanuel Sabonnadière, CEA-Leti CEO, in a statement.
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