Leti, Soitec form substrate research center

Leti, Soitec form substrate research center

Technology News |
French research institute Leti and wafer provider Soitec SA, one of its early spin offs chartered with developing silicon-on-insulator technology, have agreed to create the Substrate Innovation Center (SIC) to pursue further research.
By Peter Clarke


The agreement includes a five-year partnership on the R&D of engineered substrates for microelectronics including SOI and beyond. The SIC will be based at Leti’s campus in Grenoble but neither Leti nor Soitec said how much money they would invest in the centre or whether any equipment companies had signed up to participate.

Leti and Soitec said the Substrate Innovation Center will be a world-class prototyping hub where equipment partners can pioneer the use of new materials with access to Leti and Soitec expertise and a pilot manufacturing line. As a result, partners will gain access to exploratory sampling, prototyping and collaborative analysis.

At the SIC, Leti and Soitec engineers will develop engineered substrates for applications in 4G/5G connectivity, artificial intelligence, sensors and displays, automotive, photonics, and edge computing. The research is expected to involve the complete supply chain from materials suppliers up to product designers.

“Leti and Soitec’s collaboration on SOI and differentiated materials, which extends back to Soitec’s launch in 1992, has produced innovative technologies that are vital to a wide range of consumer and industrial products and components,” said Emmanuel Sabonnadière, Leti CEO, in a statement. “This new common hub at Leti’s campus marks the next step in this ongoing partnership. By jointly working with foundries, fabless, and system companies, we provide our partners with a strong edge for their future products.”

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