Process improvements lead to uprated Schottky diode performance

Process improvements lead to uprated Schottky diode performance

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Using an advanced deep-trench process, the SDT series of Schottky diodes (Diodes Inc) offers superior performance at similar or lower cost to planar-type Schottky diodes.
By Peter Clarke


The initial family of 29 devices provides the blocking, free-wheeling, flyback and other diode functions commonly found in a wide range of applications, such as AC-DC chargers/adapters, DC/DC up/down conversion, and AC LED lighting.

Diodes’ deep-trench process enables the SDT series of Schottky diodes to achieve a forward voltage (VF) as low as 0.62V along with a leakage current of 3.5 µA. This performance results in outstanding power efficiency and contributes to smaller form-factors for end-system designs. Within the family, maximum average rectified current ratings range from 5A to 40A, with peak repetitive reverse voltages (VRRM) up to 120V and forward surge currents (IFSM) as high as 280A, ensuring robust system operation across the full temperature range.

PowerDI5, TO220AB, and ITO220AB package options all offer excellent thermal transfer properties that allow the SDT series Schottky diodes to perform reliably in demanding applications. These packages are suited for high-volume manufacturing and also allow the SDP parts to be used as drop-in replacements for generic planar-type Schottky diodes.

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