RF Micro Devices unveils rGaN-HV process technology
This GaN process technology — rGaN-HV™ — enables substantial system cost and energy savings in power conversion applications ranging from 1 to 50 kW. rGaN-HV delivers device breakdown voltages up to 900 V, high peak current capability, and ultra-fast switching times for GaN power switches and diodes. The technology complements the company’s GaN 1 process, which is optimized for high power RF applications and delivers high breakdown voltage over 400 V, while, the company’s GaN 2 process, which is optimized for high linearity applications and delivers high breakdown voltage over 300 V.
RFMD will manufacture discrete power device components for customers in its Greensboro, NC, wafer fabrication facility (fab) and provide access to rGaN-HV to foundry customers for their customized power device solutions.