SiOx ReRAM reaches 1Mbit milestone

SiOx ReRAM reaches 1Mbit milestone

Technology News |
ReRAM developer Weebit Nano Ltd. (Hod Hasharon, Israel) has demonstrated a working 1Mbit silicon-oxide ReRAM array manufactured using a 40nm process technology.
By Peter Clarke


Commenting on the milestone, Coby Hanoch, CEO of Weebit Nano, said: “Our technology will be able to address the vast majority of the non-volatile memory demand in embedded memory applications, so we can now proceed to the next step of preparing for productisation. We have already held initial discussions with various leading global companies in the consumer and memory domains. With the achievement of this globally significant milestone we now intend to progress these discussions.”

“Weebit Nano’s SiOx ReRAM technology can be manufactured using existing processes with the existing equipment in production lines, as opposed to other technologies that use non-standard materials,” said Hanoch.”Using standard materials has enabled us to achieve this milestone significantly quicker than any competitive ReRAM technology,” he added.

Weebit Nano recently announced it has extended its agreement with Leti to further develop and optimise its ReRAM memory technology. This will allow the acceleration of the optimisation process that will focus on improving the quality of the 1Mbit array, bringing the technology to the level needed to move to a production level fab.

Related links and articles:

News articles:

Weebit silicon-oxide ReRAM headed to 28nm, AI

University College London spins out ReRAM startup

Weebit scales SiO2 ReRAM to 4kbit

Weebit moves SiOx ReRAM on to 40nm

Linked Articles
eeNews Analog