SMIC adds direct bond capability for image sensors
The addition of DBI enables SMIC to manufacture hybrid stacked backside illuminated (BSI) image sensors, as well as other semiconductor devices for applications in smartphones and automobiles. SMIC and Invensas previously signed a development license in March 2017.
DBI technology is a low temperature hybrid wafer bonding solution that allows wafers to be bonded with scalable fine pitch 3D electrical interconnect without requiring bond pressure. DBI 3D interconnect can eliminate the need for through-silicon vias (TSVs) and reduce die size and cost while enabling pixel level interconnect for future generations of image sensors.
“By working closely with the Invensas team, we have been able to quickly bring in the DBI manufacturing process and are now prepared to offer DBI for image sensors, MEMS sensor hubs, power management ICs, and beyond to our customers at 200mm,” said Roberto Bez, vice president of technology development at LFoundry, SMIC’s subsidiary in Avezzano, Italy.
Sunny Hui, SMIC’s senior vice president of marketing, said that now the technology had been successfully introduced at Avezzano on 200mm-diameter wafers SMIC is prepared to roll it out to manufacturing around the globe, on both 200mm and 300mm wafers.
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