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5th gen BiCS flash boosts capacity and offers more bandwidth

5th gen BiCS flash boosts capacity and offers more bandwidth

Technology News |
By eeNews Europe



Samples of the new devices that have a 512 gigabit (64 gigabytes) capacity with 3-bit-per-cell (triple-level cell, TLC) technology are expected to ship in Q1 this year. The company is working to incorporate the fifth-generation process technology to larger capacity devices, such as 1 terabit (128 gigabytes) TLC and 1.33 terabit 4-bit-per-cell (quadruple-level cell, QLC) devices.

The 112-layer stacking process technology uses advanced circuit and manufacturing process technology to provide an increases cell array density that is around 20 percent better than the 96-layer stacking process. The new technology lowers the cost per bit, while increasing the manufacturability of memory capacity per silicon wafer. It also improves interface speed by 50 percent, along with higher programming performance and shorter read latency.

Fifth-generation BiCS FLASH was developed jointly with technology and manufacturing partner Western Digital Corporation. It will be manufactured at KIOXIA’s Yokkaichi Plant and the newly built Kitakami Plant.

More information

www.kioxia.com

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