Applied Materials gears up to make emerging non-volatile memory: Page 2 of 2

July 09, 2019 //By Peter Clarke
Applied Materials gears up to make emerging non-volatile memory
Applied Materials Inc. has announced the creation of a series of phase vapor deposition (PVD) machines to specifically support the manufacture of magnetic RAM, Resistive RAM and phase-change memory.

As data generation grows exponentially, cloud data centers require order-of-magnitude improvements in the speed and power consumption ReRAM and phase-change RAM (PCRAM) are non-volatile high-density memories that can be used as storage class memory.

Resistive RAM use novel materials – often metal oxides – to create filamentary connections while PCRAM uses chalcogenide materials in memory cells that can be moved from amorphous to crystalline with a change in resistance. As with 3D NAND memories there is scope to arrange memory in multiple stacked planes and cells can be used to store multiple bits. ReRAM is also a candidate for in-memory computing architectures whereby computing elements are integrated into the memory arrays to help overcome the data movement bottleneck associated with AI computing.

To address this opportunity Applied is introducing the Endura Impulse PVD platform. "We specify the Applied Materials Endura Impulse PVD system with on-board metrology in our ReRAM technology engagements with memory and logic customers because it enables a breakthrough in these critical metrics," said George Minassian, CEO and co-founder of Crossbar Inc.

Sung Gon Jin head of the advanced technology thin film group at SK Hynix, said: "In addition to providing continued innovations in DRAM and NAND, SK Hynix is pioneering the development of next-generation memories that can help boost performance and reduce power consumption.

Related links and articles:

www.appliedmaterials.com

News articles:

Applied, ARM to develop CeRAM for neuromorphic applications

ARM, Applied, seek to replace SRAM with MRAM

Spin Memory: Using MRAM in place of SRAM

PCM, MRAM will lead in non-volatile memory


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