"This is a logic friendly technology that requires two or three non-critical layers. For the logic and foundry guys this is heaven," he added.
Add to that high temperature stability, the scalability and familiarity of the materials and it might seem that FeFET faces an easy win.
But there is one figure of merit that FMC needs to drive higher. On his chart of measured and published characteristics of FE-HfO2 data retention stands at 1,000 hours at 125C. The expectation is that 10 years at 175C can be reached, but there is clearly work to be done.
As a refinement of high-k dielectric the ferroelectric material is equally applicable to gate-all-around and nanosheet or nanoribbon transistors. Source: FMC.
A second objection is that MRAM – and in STMicroelectronics case phase-change memory – has already been adopted by leading foundries for embedded memory at 28nm and below so the fight is not with embedded flash. "MRAM needs additional materials. Ferroelectric memory needs no special materials and scales with logic so we can go to FinFET," riposted Pourkeramati. MRAM is also susceptible to magnetic fields.
Next Pourkeramati emphasized that ferroelectric memory can address embedded non-volatile memory for cache memories as well as stand-alone chips for storage-class memory. FMC has also done some preliminary work specific to a 3D stacked form of memory. "We are scalable to n layers," said Pourkeramati. And it can be used for neuromorphic applications. "We have created IP [intellectual property] for all applications."
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