China's YMTC takes 3D-NAND to 64 layers

September 23, 2019 //By Peter Clarke
China's YMTC takes 3D-NAND to 64 layers
Yangtze Memory Technologies Co. Ltd. (YMTC) has put a 64-layer 256Gbit three-level cell 3D-NAND flash memory into mass production. The chip is intended to meet requirements for solid-state disk (SSD) storage subsystems.

Yangtze demonstrated a 32-layer 3D-NAND chip in 2017 and it had been predicted in the previous year that the company would move as quickly as possible to a 64-layer memory where it would have a chance of competing against established players such as Samsung, SK Hynix, Micron and Toshiba.

Those competitors have now moved on to 72- and 96 layers and companies such as SK Hynix and Toshiba-Western Digital are expected to move to 128 layers soon. Nonetheless the move demonstrates China is rapidly catching up with the leading edge.

YMTC's 64-layer 3D NAND flash memory is designed using the company's Xtacking architecture where it claims to have the highest density partly because the approach marries memory cells on one wafer to peripheral circuits on a second wafer using metal vias (see 'Xtacking' approach offers faster 3D-NAND, claims Yangtze ).

YMTC said it plans to launch SSD, UFS, and other products installed with 64-layer 3D NAND flash memory for enterprise servers, PCs, and mobile devices. In a statement the company stressed the independent nature of its R&D and innovation perhaps seeking to stave off the possibility of legal activity.

"As the era of 5G, AI, and super-large data centers approaches, flash memory market demands will continue to grow. The mass production of YMTC's 64-layer 3D NAND flash memory will inject new energy for the robust development of the global memory market," said Cheng Weihua, co-CTO of YMTC and SVP of the technical R&D center, in the same statement.

Related links and articles:

www.ymtc.com

News articles:

Yangtze makes 32-layer NAND flash

China catching up in 3D-NAND flash race

China's Unigroup plans to spend $60 billion, says report

'Xtacking' approach offers faster 3D-NAND, claims Yangtze


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