DRAM maker Hefei Changxin, also known as Innotron, was founded in May 2016. The commencement of commercial manufacturing is somewhat delayed from previous announcements. Innotron completed construction of its wafer fab in June 2017 with installation of equipment in 3Q17, according to reports. Trial production was due to start there in 3Q18 with mass production due in 1H19.
Innotron has chosen an LPDDR4 interface 8Gbit DRAM introduced on a 10nm manufacturing process technology as its first product, which will put it in direct competition with established DRAM suppliers. This could put it a risk of law suits for patent infringement and to reduce that risk may decide to sell only in the Chinese market.
The DRAM market in 2018 was dominated by three players who took 95 percent of the market: Samsung, SK Hynix and Micron Technology accounted for 44, 29 and 22 percent, respectively.
CXMT enjoys backing from the Chinese-state according to reports and has planned total investment of about 150 billion yuan (about US$21 billion) the China Securities Journal stated.
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