Globalfoundries Inc. (Santa Clara, Calif.) plans to offer CBRAM as an embedded NVM option on its 22FDX silicon-on-insulator 22nm manufacturing process for production in 2022, with a plan to extend the offer to other processes, Dialog said.
It was not made clear why the option will need to so long to be brought to production. The memory requires as little as the addition of a single mask layer to a logic process and Dialog claims that as it is a 'back-end-of-line' technology it enables relatively easy integration into technology nodes.
The resistive RAM (ReRAM) technology is based on the movement of copper ions through amorphous silicon dioxide to form cross-point filamentary bridge switches. CBRAM was developed by Adesto Technologies Inc. and the technology passed to Dialog with the acquisition of Adesto in September 2020 (see Dialog Semiconductor to expand into IIoT with Adesto Technologies acquisition ).
Adesto was founded in 2006 with plans to develop a non-volatile memory based on technology licensed from Axon Technologies Corp., a spinoff of Arizona State University. The company was one of the only ones, out of a slew of competitors, to bring a ReRAM to market although it found selling products based on the technology difficult and made use of other, more conventional NVM technologies.
Dialog states that CBRAM is suitable for harsh environments and is applicable to IoT and 5G connectivity, artificial intelligence and consumer, medical, and select industrial and automotive applications.
"This agreement not only enables a state-of-the-art technology for the industry, but it also creates the opportunity for Dialog to adopt leading-edge CBRAM technology for its next generation of system chips," said Mark Tyndall, senior vice president of corporate development at Dialog Semiconductor, in a statement.
Through IP customization, customers may modify the CBRAM cell to optimize their SoC designs, enhance security, or even adapt the cell for new applications.
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