Ferroelectric Memory appoints Daniel Artusi to board

April 06, 2021 // By Peter Clarke
Ferroelectric Memory appoints Daniel Artusi to board
Ferroelectric Memory GmbH (Dresden, German) has appointed semiconductor industry veteran Daniel Artusi to its board of directors.

Artusi has more than 40 years of experience in the semiconductor industry and most recently served as vice president of the Client Computing Group at Intel. Prior to Intel he was CEO of Lantiq Deutschland GmbH, a fabless chip company that was acquired by Intel in 2015.

Before that Artusi held multiple senior positions with Conexant Systems, Silicon Laboratories and Motorola. Additionally, he held the position of operating executive with Golden Gate Capital, a private equity firm. Artusi currently serves on the boards of MaxLinear, Minim, GenXComm, VisIC-Tech, as well as on the engineering advisory board of the Cockrell School of Engineering at the University of Texas at Austin.

Ferroelectric Memory GmbH (FMC) has developed semiconductor memory based on hafnium oxide, otherwise known as an insulator in semiconductor manufacturing. The company was formed in 2016 and is working with undisclosed partner semiconductor companies on embedded and stand-alone memory implementations. The company offers   both FeFET and FeCAP capacitor technology.

"FMC has developed a unique and patented technology for transforming amorphous hafnium-dioxide into crystalline ferroelectric hafnium-dioxide, which can offer superior performance compared with state-of-the-art and emerging memory solutions," said Artusi in a statement issued by FMC.

"This technology will bring significant benefits to applications such as AI and 5G, Big Data, which require high-performance and low power consumption as well compatibility with leading-edge CMOS logic processes," Artusi added.

Related links and articles:

www.ferroelectric-memory.com

News articles:

CEO interview: FMC's Pourkeramati on roadmaps, turning away investors

SK Hynix backs Germany's ferroelectric memory startup

Sony, Kioxia pursue ferroelectric non-volatile memory

IEDM ferroelectric FET, hafnium oxide round up


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