Flash memory is top capex target in 2019

January 14, 2019 //By Peter Clarke
Flash memory is top capex target in 2019
Capital spending on semiconductor production is set to fall in 2019, according to IC Insights, but it is set to be the third year that more than $25 billion will be spent on flash memory production capacity, topping both DRAM, foundry spending.

Flash memory trailed the foundry segment in capex in 2016, but the spending showed 92 percent growth in 2017 to $27.6 billion and increased another 16 percent to $31.9 billion 2018 as manufacturers brought up 3D NAND. Flash capex is forecast to decline 18 percent in 2019 to $26.0 billion.

Flash to top capex in 2019 for third year. Source: IC Insights.

In 2018, SK Hynix opened its M15 wafer fab in Cheongju, South Korea producing 72-layer 3D NAND flash; Micron broke ground on construction of a third NAND wafer fab in Singapore; Toshiba Memory completed construction of Fab 6 in Yokkaichi, Japan and broke ground on a next fab in Kitakami. Meanwhile China's XMC/Yangtze River Storage Technology completed construction of its fab and began small-volume production of 32-layer 3D NAND flash.

Samsung spent $13 billion on flash capex in 2017 and $9 billion in 2018 and IC Insights estimates Samsung will spend another $7 billion for flash capex in 2019.

Related links and articles:


News articles:

'Xtacking' approach offers faster 3D-NAND, claims Yangtze

Toshiba breaks ground on 3D-NAND fab

Samsung ramps production of 96-layer 3D-NAND flash

Toshiba starts sampling 96-layer, quad bit 3D-NAND

Vous êtes certain ?

Si vous désactivez les cookies, vous ne pouvez plus naviguer sur le site.

Vous allez être rediriger vers Google.