The GaN-based MEMS resonator was verified to operate stably even at 600 K. It showed a high temporal resolution and good temporal stability with little frequency shift when the temperature was increased. This is because the internal thermal strain compensated the frequency shift and reduced the energy dissipation. Since the device is small, highly sensitive and can be integrated with CMOS technology, it is promising for use in 5G communication, IoT timing devices, in-vehicle applications, and advanced driver assistance systems.
The research was supported by JST's Strategic Basic Research Program, Precursory Research for Embryonic Science and Technology(PRESTO). This study was presented at the IEEE International Electron Devices Meeting (IEDM2020) held online on December 12-18, 2020, titled "Self-Temperature-Compensated GaN MEMS Resonators through Strain Engineering up to 600 K.”
Eliminating latency in next generation WiFi 6E devices
3D metamaterials with unique microwave/optical properties
SiTime targets $2B precision timing market with MEMS technology
Researchers achieve record data transmission distance with soliton crystal