Industry’s first 180nm BCD-on-SOI for 375V AC-line power devices

October 27, 2021 // By Nick Flaherty
Industry’s first 180nm BCD-on-SOI for 375V AC-line power devices
X-FAB Silicon Foundries has launched its second generation of 180nm superjunction high-voltage (HV) primitive devices.

The XT018 process from European chip foundry X-fab covers a voltage range from 45 V to 375 V for the first time for medical ultrasound transmitter/receiver ICs and AC line powered IoT sensors.

The complementary NMOS/PMOS devices are based on the company’s BCD-on-SOI platform with deep trench isolation (DTI). Fully qualified for an extended temperature range of -40˚C to +175˚C, they can be incorporated into automotive AEC-Q100 Grade 0 products. They deliver industry-leading on-resistance (R(ds)on) figures, while still providing robust safe-operating areas for R(ds)on, Idsat and Vt. The complete voltage range up to 375 V is covered via use of a single process module.

BCD-on-SOI technologies are attractive to designers due to the superior attributes they have when compared to bulk BCD technologies. Key benefits of this approach include effectively latch-up free circuits, enhanced EMC performance and simplified handling of below ground transients. BCD-on-SOI allows significant die size area reductions, resulting in cost advantages over bulk BCD.

This enables designers to use highly integrated ICs which can be directly powered from 230 V AC mains. This opens up an alternative power option to the increasing number of IoT edge nodes now starting to be deployed, allowing the power budget constraints of battery use to be avoided. Combined with the qualified XT018 eFlash, smart IoT device implementations are also possible.

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Medical ultrasound transmitter/receiver ICs require well-matched HV NMOS and PMOS devices in terms of their R(ds)on and Idsat. In response to this, X-FAB has also released a new low R(ds)on PMOS module. This module comes with new PMOS primitive devices capable of supporting operating voltages up to 235 V. These HV PMOS primitive devices feature a 40% reduction in R(ds)on compared to regular 2nd generation superjunction PMOS devices.


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