IQE in strategic deal with GlobalFoundries for GaN-on-silicon

October 22, 2021 // By Nick Flaherty
IQE in strategic deal with GlobalFoundries for GaN-on-silicon
IQE has signed its first development collaboration program with GlobalFoundries for RF GaN technologies

UK wafer supplier IQE has signed a strategic deal with GlobalFoundries to develop  gallium nitride on silicon (GaN on Si) technologies for mobile and wireless infrastructure applications.

The deal will allow GaN on Si to be offered at GF’s Fab 9 facility in Burlington, Vermont, using wafers supplied by IQE, based in Cardiff. IQE has long worked with R&D lab imec in Belgium on GaN on silicon technology.

This will be key for future 5G systems, including mmWave. Working together, GF and IQE will pool their expertise and facilitate the development of crucial building blocks for current and future communications systems.

"IQE’s collaboration with GlobalFoundries marks a step change for us. It recognises the quality of our market-leading GaN products and demonstrates how IQE’s ever-closer customer relationships can bring more innovative products to market, at scale. This is a unique opportunity to leverage the performance of GaN with the cost structure of high-volume silicon manufacturing. We look forward to working closely with GlobalFoundries over the coming years," said Dr Wayne Johnson, Executive Vice President for Wireless & Emerging Products at IQE

"GlobalFoundries continues to lead with innovative and feature rich solutions for 5G. Our collaboration with IQE will enable us to deliver differentiated gallium nitride on silicon solutions that enable next-generation connectivity and user experiences that will help enable our customers’ innovations," said Dr. Bami Bastani, Senior Vice President And General Manager, Mobile And Wireless Infrastructure at GlobalFoundries.

www.iqe.com

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