Japan startup reports first normally-off gallium-oxide MOSFET: Page 2 of 2

July 17, 2018 //By Peter Clarke
Japan startup reports first normally-off gallium-oxide MOSFET
Flosfia Inc. (Kyoto, Japan), a 2011 spin off from Kyoto University, has demonstrated a normally-off gallium-oxide (Ga2O3) power transistor, which it claims paves the way to the use of gallium-oxide as a standard material for power semiconductors.

The company was ambiguous about the nature of the material used for the p-type inversion layer within the alpha-Ga2O3 MOSFET. This material could be an alternative transition metal oxide that is more commonly used in wafer fabs.

The gate threshold voltage extrapolated from I-V curve was 7.9V. The device is made of a novel p-type corundum semiconductor which functions as an inversion layer, the company said. Without a p-type material it would have been hard to realize a normally-off MOSFET.

Figure 1. I-V curve of normally-off Ga2O3 MOSFET. Source: Flosfia Inc.

The company was ambiguous about the nature of the material used for the p-type inversion layer within the alpha-Ga2O3 MOSFET. This material could be an alternative transition metal oxide that is more commonly used in wafer fabs.

Figure 2. Cross-sectional schematic of device. Source: Flosfia Inc.

Figure 3. Optical micrograph of normally-off Ga2O3 MOSFET. Source: Flosfia Inc.

Flosfia said it plans to manufacture alpha-Ga2O3 power devices under the GaO series name starting with SBDs and MOSFETs for use in AC adapters, motor drivers for motors in robots, electric vehicles and domestic equipment, power conditioning circuits for solar cells. Flosfia claims that GaO has the potential to shrink inverter size tenfold and to halve cost while maximizing conversion efficiency.

Related links and articles:

www.flosfia.com

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