Kioxia announces another 3D-NAND wafer fab

December 15, 2020 // By Peter Clarke
Kioxia announces another 3D-NAND wafer fab
Kioxia Corp., formerly Toshiba Memory, has announced a plan to expand its Kitakami campus, in Iwate prefecture, Japan, to boost 3D-NAND flash memory production.

The 136,000 square meter area adjacent to the current site will provide room for the construction of the company's 'K2' manufacturing facility, with site preparation work due to commence in spring of 2021 and to be completed by spring of 2022.

Kioxia did not disclose how much it plans to spend on the K2 wafer fab or how soon it would be producing 3D-NAND flash memory chips.

The latest announcement comes after Kioxia announced it would begin constructing a $9.5 billion wafer fab at its Yokkaichi site in Mie Prefecture beginning in spring 2021 (see Kioxia announces next 3D-NAND wafer fab, delays IPO ).

Although Kioxia recently announced it had delayed plans for an IPO it is reported that it has gained a license from the US government to supply memories for servers to the sanction-bound Chinese company Huawei Technologies Inc.

Related links and articles:

www.kioxia.com

News articles:

Micron ships 176-layer 3D-NAND flash

Kioxia announces next 3D-NAND wafer fab, delays IPO

Memory prices set to rise as makers report disruption

Intel sells NAND memory business to SK Hynix

Samsung to expand NAND flash production


Vous êtes certain ?

Si vous désactivez les cookies, vous ne pouvez plus naviguer sur le site.

Vous allez être rediriger vers Google.