MEMS RF switch achieves 95dBm IP3 linearity

March 27, 2021 // By Peter Clarke
MEMS RF switch achieves 95dBm IP3 linearity
The MM5130 RF switch from Menlo Microsystems Inc. achieves IP3 linearity of greater than 95dBm, up to 40db better than existing electromechanical relays and solid-state switches.

Menlo Microsystems (Irvine, Calif.) claims the MM5130, with its ability to handle 25W continuously, is the highest power density SP4T switch available. It does this while operating across a frequency range from DC up to 26GHz with an insertion loss of 1.3dB at 18 GHz and switching speeds less than 10microseconds.

IP3 measures the third-order intercept of intermodulation distortion and is an industry measure of how much distortion a switch or other component will introduce into an RF circuit. The 95dBm IP3 level is difficult to achieve in available semiconductor processes and allows reductions in size, weight, power and cost and power amplifiers and other RF components can be scaled back in power and reduced in size.

The MM5130 is applicable in RF and microwave switching front-ends, phase-shifters for beam steering and phased array antennas used in 5G networks. The high linearity also makes the MM5130 suitable for switch matrices and RF test and measurement applications.

Menlo Micro is engaging with leading 5G infrastructure manufacturers, who have called for IP3 linearities greater than 90dBm. Menlo Micro is also working with aerospace and defense customers to design in the MM5130 for advanced radios and other critical electronic systems.

Manufacturing of the MM5130 have been moved from a 4-inch wafer reseach lab to a 200mm-diameter wafer fab providing a manufacturing capacity of millions of units per month. The MM5130 switch is in volume production today and commercially available in a miniaturized wafer-level chip-scale package (WL-CSP).

Related links and articles:

www.menlomicro.com

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