It appears that Micron has gained a lead over rivals Samsung and SK Hynix, which are currently only marketing DDR4 DRAMs on their websites, but could also be sampling in secret.
Micron's chips are made using a 1znm manufacturing process technology, the third node lying somewhere between 20nm and 10nm.
The change to DDR5 will be accompanied by larger monolithic densities typically from 8bit up to 64Gbit. Micron did not say what capacity RDIMMs it is sampling or the capacity of the chips included on those RDIMMs.
The combination of increased memory capacity and bandwidth resulting from the adoption of DDR5 is set to deliver an 85 percent improvement in memory performance, Micron said.
Advanced workloads resulting from rapidly expanding datasets and compute-intensive applications have fueled processor core count growth which will be bandwidth-starved by current DRAM technology, Micron asserted. DDR5 will deliver more than a 1.85 times increase in performance compared to DDR4. DDR5 also enables the increased reliability, availability and serviceability (RAS) that modern data centers require, Micron added.
Samsung and SK Hynix, Micron's main rivals in DRAM, have said they planned to release DDR5 products by the end of 2019, with SK Hynix focusing on desktops and Samsung on mobile devices, each contrasting to Micron's focus on data centers.
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