MRAM set to replace SRAM, says TSMC roadmap

May 03, 2021 // By Peter Clarke
MRAM set to replace SRAM, says TSMC roadmap
Leading foundry TSMC is preparing a variant of magnetic RAM that could be inserted into its 14nm FinFET process to replace SRAM as scratchpad memory in system chips.

That's according to a slide shown by Tom Coughlin and Jim Handy at the Storage Networking Industry Association (SNIA) persistent memory and computational storage (PMCS) summit, which was held virtually this year.

The development is labelled as 'disruptive.' It may come about as a way of achieving an area shrink over six-transistor SRAM arrays but because MRAM is a non-volatile memory that retains data when power is removed could stimulate innovation in processor architectures.

Coughlin and Handy provided a joint presentation (see video below) on trends in nonvolatile memory technologies, in which they discussed the status of phase-change memory, resistive RAM, ferroelectric RAM and MRAM.

TSMC embedded MRAM roadmap. Source: Coughlin and Handy.

They showed an SoC roadmap slide from TSMC which labelled the embedded MRAM option at 22nm as eMRAM-F. It also shows the offer of embedded RRAM at 22nm and embedded PCM albeit with the insertion point question marked. It is notable that the roadmap also shows another variant, eMRAM-S, for the replacement of SRAM working memory being offered at the 14nm/12nm node.

Related links and articles:

www.snia.org

News articles:

Embedded MRAM available on 22nm FDSOI

TSMC offers 22nm RRAM, taking MRAM on to 16nm

PCM, MRAM set to dominate emerging memory market

Boom time coming for PCM, MRAM, ReRAM non-volatile memory markets

Spin Memory: Using MRAM in place of SRAM


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