R&D firm offers compact EUV lithography source

May 10, 2018 //By Peter Clarke
R&D firm offers compact EUV lithography source
Lyncean Technologies Inc. (Fremont, Calif.) is developing a 1kW extreme ultraviolet (EUV) light source for lithography.

Lyncean was formed in 2001 to develop the Compact Light Source (CLS), a miniature synchrotron x-ray source based on research performed at the SLAC National Accelerator Laboratory and Stanford University.

The first commercial Lyncean CLS, installed at the Munich School of BioEngineering on the campus of The Technical University of Munich, has been in continuous operation since April 2015. Lyncean's latest development is an EUV source based on coherent photon generation in a compact electron storage ring, specifically designed for high volume manufacturing semiconductor lithography.

Much of the technology that will be developed for the compact EUV source (CES) is leveraged from the technology from the CLS. In addition, accelerator based sources generate light in a clean, high vacuum environment and are inherently very reliable, two features that make them ideal for high volume manufacturing.

At present EUV light sources come from a plasma from a laser vaporization of tin-droplets. However, over time tin debris accumulates on the collector and adversely impacts light generation. Replacing the collector every few months requires taking down and reinstating the vacuum. This has created low up-times for EUVL scanners, reduced average wafer throughput and delaying their economic introduction.

With a brighter light source – 1kW versus 250W – and high reliability the CES could yet impact EUV lithography.

Lyncean has recently received investment from Intel Capital (see Intel Capital steers focus back towards silicon ).

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