Samsung applies EUV to DRAMs at 10nm, 14nm

March 26, 2020 //By Peter Clarke
Samsung applies EUV to DRAMs at 10nm, 14nm
The world's leading supplier memory components of Samsung Electronics Co. Ltd. has shipped 10nm-class DDR4 DRAM modules made with extreme ultraviolet (EUV) lithography in the D1x process.

EUV-based DRAM modules have now completed global customer evaluations, Samsung said.

Samsung is the first DRAM vendor to adopt EUV for DRAM production. Although the technology is expensive it reduces the number of steps in production used for multi-patterning and improves patterning accuracy. This progress in turn enables enhanced performance and greater yields, Samsung said.

Samsung said it will start deploying EUV in the 10nm-class D1a process or 14nm-class DRAM. Samsung expects to begin volume production of D1a-based DDR5 and LPDDR5 DRAMs next year, which would double the manufacturing productivity of the 300mm-diameter D1x wafers.

Samsung said it will open a second fabrication line at its fab in Pyeongtaek, South Korea, sometime in 2H20 to better address growing demand.

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