Samsung makes 1Tbyte memory

January 31, 2019 //By Peter Clarke
Samsung makes 1Tbyte memory
Samsung Electronics Co. Ltd. has begun producing a one-terabyte embedded universal flash storage (eUFS v2.1) for use in smartphones.

The 1TB eUFS is made of a stack of 16 individual 512Gbit vertical NAND flash die (3D-NAND) plus a freshly developed controller IC in package measuring 11.5mm by 13.0mm.

This will allow future smartphone users to enjoy hundreds of 10-minute videos in 4K UHD format – 3840 pixels by 2160 pixels.

The 1TB eUFS also has enhanced data transfer rate. At up to 1,000 megabytes per second (MB/s), it features approximately twice the sequential read speed of a typical 2.5-inch SATA solid state drive (SSD).

Samsung said it plans to expand the production of 512Gbit V-NAND chips at its Pyeongtaek plant in Korea in 1H19 to address anticipated strong demand for the 1TB eUFS from mobile device manufacturers around the world.

Related links and articles:

News articles:

JEDEC publishes Universal Flash Storage (UFS) standard

Samsung ramps production of 96-layer 3D-NAND flash

Toshiba starts sampling 96-layer, quad bit 3D-NAND

Vous êtes certain ?

Si vous désactivez les cookies, vous ne pouvez plus naviguer sur le site.

Vous allez être rediriger vers Google.