The latest 256Gbit 3D-NAND flash comprises 96 layers of 3bit-per-cell NAND flash memory cells and with a Toggle DDR 4.0 NAND interface that can operate at up to 1.4Gbps.
Samsung claims that its chip includes the electronics industry's first use of the 'Toggle DDR 4.0' interface and it has provided a 40-percent increase in data transmission rate over its 64-layer predecessor.
The energy efficiency of Samsung’s new V-NAND remains comparable to that of the 64-layer chip, primarily because the operating voltage has been reduced from 1.8 volts to 1.2 volts. The new V-NAND also has the fastest data write speed to date at 500-microseconds, which represents about a 30-percent improvement over the write speed of the previous generation, while the response time to read-signals has been significantly reduced to 50 microseconds.
The fifth-generation V-NAND chip – Samsung's name for 3D-NAND is V-NAND – includes a number of materials developments including improved atomic layer deposition which has improved productivity by more than 30 percent, Samsung said. It is not clear whether this is by way of improved area utilization, improved yield, a combination of the two – or simply that 64 layers has gone to more than 90 in the latest chip.
Nonethless less the improved ALD has allowed the height of each cell layer to be reduced by 20 percent, and prevents crosstalk between cells.
"In addition to the leading-edge advances we are announcing today, we are preparing to introduce 1-terabit and quad-level cell (QLC) offerings to our V-NAND lineup that will continue to drive momentum for next-generation NAND memory solutions throughout the global market," said Kye Hyun Kyung, executive vice president of flash products and technology at Samsung Electronics.
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