SOI wafers optimized for NIR, 3D imaging

December 04, 2017 //By Peter Clarke
SOI wafers optimized for NIR, 3D imaging
Soitec SA (Bernin, France) has available a new generation of silicon-on-insulator (SOI) substrates for image sensors.

The wafer enables increased performance in the near-infrared spectrum including 3D image sensors such as those used in the latest smartphones for augmented and virtual reality applications and facial recognition.

The Imager-SOI provides enhanced quantum efficiency by trapping light above the buried oxide (BOX) layer and reduces cross-talk between pixels. The BOX also limits the impact of substrate noise and metal contamination, and acts as a diffusion barrier to prevent metal contaminants migrating into pixels.

The net result is an improved signal-to-noise ratio in the NIR spectrum, the company claimed. Wafers are available at 300mm diameter.

Market research firm Yole Developpement forecasts that the annual market for 3D imaging and sensing devices will grow with a compound annual growth rate of 37.7 percent over the five years from 2017 to reach $9 billion in sales in 2022.

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