Sony, Kioxia pursue ferroelectric non-volatile memory

May 27, 2020 //By Peter Clarke
Sony, Kioxia pursue ferroelectric non-volatile memory
Sony Semiconductor Solutions will present a ferroelectric RAM array made using hafnium zirconium oxide at the upcoming VLSI Symposia on Technology and Circuits.

Kioxia, the former memory components part of Toshiba, also has a paper on ferroelectric RAM. The symposia have gone virtual in 2020 and take place June 15 to 19.

The memory is just one of a number of component developments at Sony. The company is also investigating the use of resistive RAM (ReRAM) technology that could be used for solid-state disks (see Will Sony launch cross-point nonvolatile memory? ).

However, the FeRAM paper due for presentation is described as being an SoC-compatible embedded memory composed of one transistor and one capacitor. The size of the array and the underlying process geometry are not mentioned in the paper's title.

Europe's Ferroelectric Memory Company (Dresden, Germany), has been in a pioneer of hafnium-oxide base non-volatile memory technology (see Dresden NVM startup raises funds ). Uwe Schroeder from NamLab GmbH Dresden is due to present a short course at the symposia on ferroelectric hafnium oxide and its journey from memory technology to emerging applications.

Related links and articles:

www.sony.com

www.kioxia.com

www.ferroelectric-memory.com

www.namlab.de

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