Spin Transfer claims MRAM breakthrough : Page 2 of 2

May 01, 2018 //By Peter Clarke
Spin Transfer claims MRAM breakthrough
Spin Transfer Technologies Inc. (Fremont Calif.), a developer of MRAM technology, has announced that an additional layer in the perpendicular magnetic tunnel junction (pMTJ) of an MRAM can improve data retention by a factor of 10^4 while reducing write current.
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2) An increased spin polarization when current is flowing and the device is writing a new state

The first increases retention while the second reduces switching current while extending the endurance of the device, the company said.

"There is a huge demand for a memory with the endurance of SRAM, but with higher density, lower operating power and with non-volatility. We believe the improvements the PSC structure brings to STT-MRAM technology will make it a highly attractive alternative to SRAM for these reasons," said Mustafa Pinarbasi, CTO at Spin Transfer Technologies, in a statement.

Related links and articles:


Spin Transfer: Advanced MRAM Technology

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Everspin begins STT-MRAM volume production

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