2) An increased spin polarization when current is flowing and the device is writing a new state
The first increases retention while the second reduces switching current while extending the endurance of the device, the company said.
"There is a huge demand for a memory with the endurance of SRAM, but with higher density, lower operating power and with non-volatility. We believe the improvements the PSC structure brings to STT-MRAM technology will make it a highly attractive alternative to SRAM for these reasons," said Mustafa Pinarbasi, CTO at Spin Transfer Technologies, in a statement.
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