ST starts construction of 300mm wafer fab: Page 2 of 2

January 28, 2019 //By Peter Clarke
ST starts construction of 300mm wafer fab
European chip company STMicroelectronics NV (Geneva, Italy) has begun building a 300mm wafer fab for power technologies at its Agrate campus near Milan, Italy.

One is the expansion of installed capacity for silicon-carbide power semiconductor production and the ramp up of gallium-nitride production for RF. "Here, our early investments in wideband gap compounds have already resulted in more than $100 million of silicon-carbide revenues in 2018, and we have over 30 active silicon-carbide projects with many players around the globe, both in automotive and industrial applications," Chery commented. He added that the plan was for ST remain market leader in silicon-carbide and retain at least a 30 percent market share, which could be worth more than $3 billion in annual revenue by 2025.

The third leg of ST's strategic investments is in imaging sensor technologies where Chery said the investment would be used to for R&D efforts to improve the performance of sensors for Time-of-Flight application and the 3D sensing and to allow work with customers for greater differentiation.

Chery denied that the upgrade of the Agrate build out to volume production represented a shift of emphasis at ST towards power semiconductors but said it was part of the on-going strategy to provide broad-based support for industrial and automotive applications with a selective approach in personal electronics and communications infrastructure.

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