Toshiba breaks ground on 3D-NAND fab

August 05, 2018 //By Peter Clarke
Toshiba breaks ground on 3D-NAND fab
Toshiba Memory Corp., now majority owned by a consortium led by private equity, has held a groundbreaking ceremony for a wafer fab at Kitakami, in northeastern Japan, intended for production of 3D NAND memory.

Toshiba Memory is still 40.2 percent owned by Toshiba Corp. but the majority is held by Pangea KK, a consortium led by Bain Capital and including Apple, SK Hynix, Dell and Seagate Technology.

On its completion in autumn 2019, the K1 wafer fab in Kitakami, Iwate prefecture, will be one of the most advanced chip manufacturing operations in the world, dedicated to production of 3D flash memory. The fab will be Toshiba Memory's largest and the company said it expects to continue joint-venture investment with Western Digital Corp. which are the subject of discussions.

Toshiba Memory expects demand for 3D flash in enterprise servers, datacenters and smartphones to remain strong in the mid- and long-term. The Kitakami wafer fab will contribute to production and complement existing 3D-NAND production at Yokkaichi.

Decisions on equipment investment, production capacity and production plan will be made reflecting market trends.

Related links and articles:

News articles:

Toshiba starts sampling 96-layer, quad bit 3D-NAND

Intel, Micron lag behind Toshiba in 96-layer 3D-NAND, 4bits per cell

Three Chinese firms to launch memory IC production in 2018

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