UK reports progress with III-V non-volatile memory

January 14, 2020 //By Peter Clarke
UK reports progress with III-V non-volatile memory
Researchers at the University of Lancaster have reported simulations of a non-volatile memory based on resonant tunnelling of electrons within indium-arsenide and alumimium-antimonide heterostructures.

The research team has reported on simulations of an array of memory cells to make a random access memory (RAM). These simulations predict that the array would match the performance of DRAM but at hundredth the power consumption, without a destructive read and with the added benefit of non-volatility.

As such the memory is the latest candidate for the role of "universal memory" and has been trademarked by the university as UltraRAM.

The non-volatility is due to conduction band offsets of InAs and AlSb, which provides an energy barrier of 2.1eV preventing the escape of electrons. A quantum-mechanical resonant tunnelling mechanism is used to write and erase the memory.

Professor Manus Hayne, who is leading the research, said: "The work published in this new paper represents a significant advance, providing a clear blueprint for the implementation of UltraRAM memory."

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