The research team has reported on simulations of an array of memory cells to make a random access memory (RAM). These simulations predict that the array would match the performance of DRAM but at hundredth the power consumption, without a destructive read and with the added benefit of non-volatility.
As such the memory is the latest candidate for the role of "universal memory" and has been trademarked by the university as UltraRAM.
The non-volatility is due to conduction band offsets of InAs and AlSb, which provides an energy barrier of 2.1eV preventing the escape of electrons. A quantum-mechanical resonant tunnelling mechanism is used to write and erase the memory.
Professor Manus Hayne, who is leading the research, said: "The work published in this new paper represents a significant advance, providing a clear blueprint for the implementation of UltraRAM memory."