UK reports progress with III-V non-volatile memory: Page 2 of 2

January 14, 2020 //By Peter Clarke
UK reports progress with III-V non-volatile memory
Researchers at the University of Lancaster have reported simulations of a non-volatile memory based on resonant tunnelling of electrons within indium-arsenide and alumimium-antimonide heterostructures.

The work was reported in the January 2020 edition of Transactions on Electron Devices. The paper is a follow on to one published in Nature Scientific Reports in June 2019 in which the authors described the use of resonant tunnelling to create a barrier that can be opened and closed with the application of a small voltage.

The paper described both experimental and simulation results for a floating gate memory structure made of InAs/AlSb/GaSb heterostructures, with InAs used as both floating gate and the junctionless channel. Read, write and erase operations were conducted on a number of 10 micron by 10 micron gate dimension cells.

Theoretical evaluations suggest a switching energy at these dimensions of 2 x 10^-12 joules. Shrinking the device would then theoretically yield a switching energy of 10^-17 joules at the 20nm node, which is 100 and 1000 times smaller than for DRAM and Flash, respectively.

The storage time for such memories was reckoned to be at least 10^6 times longer than DRAM.

The work continues at Lancaster University to demonstrate the manufacturability of working memory chips, including fabrication of arrays of devices, development of readout logic, scaling of devices and implementation on silicon.

Related links and articles:

Transactions on Electron Devices

Room-temperature operation of low-voltage, non-volatile, compound-semiconductor memory cells

News articles:

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