Weebit moves SiOx ReRAM on to 40nm

November 27, 2017 // By Peter Clarke
Weebit moves SiOx ReRAM on to 40nm
Israel-based ReRAM developer Weebit Nano Ltd. has announced 40nm working cells in silicon-oxide based non-volatile memory technology, with memory arrays to follow in 2018.

The 40nm scaling shows that the technology can be scaled down to advanced geometries, and makes the technology relevant to multiple applications such as mobile phones, laptops and the Internet of Things, Weebit said. The company added that it had achieved this in two years while other ReRAM companies had taken 10 years

 This has been achieved ahead of schedule and quickly after successful data retention and cycling endurance testing of a 4kbit array of 300nm memory cells earlier this month (see Weebit scales SiO2 ReRAM to 4kbit).

Lifetime extrapolation showed the technology's ability to retain data for 10 years at above room temperature. In addition, the chips maintained their data after 30 mins at 260 degrees C. This exceeds the solder bath requirement of 15 minutes at such temperatures allowing preprogrammed NVMs to be added to PCBs prior to wave soldering.

The 40nm memory cells on various wafers verified the ability of Weebit Nano SiOx ReRAM cells to maintain memory behaviour in accordance with previous experiments performed on 300nm cells.

"Demonstrating such an advanced geometry paves the way for us to further develop our technology by scaling up array capacities for use in different applications and integrating into deeply scaled down CMOS technologies that are used in all processors, RAM and digital logic circuits on most small devices," said Coby Hanoch, CEO of Weebit Nano in a statement.

Next: What the chairman said

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