Weebit Nano puts silicon-oxide ReRAM on 28nm FDSOI

October 04, 2021 // By Peter Clarke
Weebit Nano puts silicon-oxide ReRAM on 28nm FDSOI
Weebit Nano Ltd. (Hod Hasharon, Israel) has demonstrated its silicon-oxide resistive RAM (ReRAM) technology on a 28nm fully-depleted silicon-on-insulator (FDSOI) process.

The characterization of the devices is a step towards implementation at 22nm. Globalfoundries has a volume FDSOI process – 22FDX – at this node in manufacture at Dresden, Germany. The inability of flash memory to scale efficiently beyond about 28nm provides an opportunity for emerging non-volatile memory technologies to scale to more advanced nodes. Phase change memory, magnetic RAM and others forms of ReRAM are being used.

Weebit working with research partner CEA-Leti, tested, characterised and measured functional 1Mbit ReRAM arrays in a 28nm FDSOI process technology produces on 300mm-diameter wafers. Characterizing such arrays is a key step to being able to gain acceptance for ReRAM for use as embedded non-volatile memory in chips used for AI, autonomous driving, 5G, and advanced Internet-of-Things (IoT) processors.

Testing of Weebit’s one-transistor-one-resistor (1T1R) ReRAM arrays, embedded in 28nm FDSOI, demonstrated robustness, endurance and data retention alongside other production-level quality parameters.

"The industry has been crying out for a new technology to succeed flash memory in advanced geometries, and these results show Weebit has a viable solution," said Olivier Faynot, head of the silicon component division at CEA-Leti, in a statement issued by Weebit Nano.

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