Coby Hanoch, CEO of Weebit, told eeNews Europe that his company would continue to pursue the leading edge at 28nm geometries and below, but that there are also numerous opportunities behind the leading edge for dense embedded non-volatile memory.
"We've demonstrated good endurance at one million cycles and life times of 10 years at 130, even 150 degrees, which is good for automotive. Now the task is to get the technology into a production fab."
Hanoch said Weebit is working with a South Korean chip manufacturer in the analog and mixed-signal space. He declined to give the name but said that as well as producing chips in their own name the company offers foundry production services. The transfer is being done initially at feature geometries larger than 40nm Hanoch said.
"Flash memory is a front-end of line technology which means that every change in the technology affects the whole of the production process. This company likes that SiOx ReRAM is in the back-end of line. Other ReRAM process require exotic materials and capital expenditure. They like that SiOx ReRAM is a relatively straightforward addition," said Hanoch.
"We will also still be working on 28nm but a startup goes where the money is." Hannoch added.
Hannoch said that trying to engage with semiconductor giants to displace flash was inconceivable right now. "Trying to compete in semiconductor manufacturing is suicide. These companies have invested billions and billions of dollars on 3D NAND flash and now they are going to 192 layers and so on. We can't compete with that at this point.
Hanoch said ReRAM will compete in the future because flash memory does not scale, and that it would play its part particularly in embedded applications.
Meanwhile there are markets for non-volatile memory modules in analog and mixed-signal circuits, in IoT ASICs and in automotive applications, Hanoch said.