A year ago Amigo Tsutsui, a senior researcher with Sony Semiconductor Solutions Corp. provided some details of a cross-point resistive RAM (ReRAM) that he indicated could appear in 2020 as a second-source or alternative component source to the phase-change memory (PCM) based Optane memory used for solid-state disks (SSDs) by Intel.
Tsutsui spoke at the Persistent Memory Summit organized by Storage Network Industry Association on January 24, 2019, and indicated that the ReRAM technology was a continuation of work disclosed at VLSI Technology Symposium in 2017, which itself could be traced back to an IEDM presentation in 2007.
Tsutsui said Sony Semiconductor is developing a cross-point ReRAM capable of high speed reads and writes and based on the electrically stimulated formation and destruction of copper filament between electrodes. He also said that components could appear in 2020 at 64Gbit or 128Gbit memory capacity while adding that an appropriate memory controller would be important to achieve the performance possibility of the native memory.
These would seem likely to be multi-chip modules composed of 16Gbit ICs.
The component would be aimed at storage-class memories, non-volatile memories that are higher speed than NAND flash memory and have the advantage of non-volatility over DRAM.
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