X-Fab adds avalanche diodes to 180nm process

June 24, 2019 //By Peter Clarke
X-Fab adds avalanche diodes to 180nm process
Analog and mixed-signal foundry X-Fab Silicon Foundries SE (Erfurt, Germany) has added avalanche photodiode (APD) and single-photon avalanche diode (SPAD) products to its XH018 180nm manufacturing process.

These diodes find use in extremely low light conditions with applications in proximity sensing, lidar, time of flight (ToF), medical imaging (CT and PET) and scientific research. Being AEC-Q100 compliant, they are suitable for deployment within automotive systems.

The APD scales in dimensions from just ten to several hundred micrometer dimensions. The proprietary quenching circuit used in the SPAD results in a dead time of less than 15ns. Its low dark count rate (<100 counts/s/square micron) means low susceptibility to thermal noise. The high photon detection probability (PDP) of the SPAD is maintained across an extensive range of wavelengths (e.g. 40 percent at 400nm).

The breakdown voltage of less than 20V allows their incorporation on to customer dies. There are models for optical and electrical simulation, along with a specific application note, that will help designers to integrate these devices into their circuitry within a short time period. As well as being supplied in a function block format, a quenching reference circuit that fully demonstrates the capabilities of the SPAD is also available.

Related links and articles:

www.xfab.com

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